The advance of an energy-efficient world lies in the next generation power conversion technique using wide bandgap (WBG) power devices (e.g., silicon-carbide (SiC ) or gallium-nitride (GaN) based). Compared with conventional Si based devices, these devices can operate at higher voltage and temperature. Also, they can switch at faster speeds with lower switching losses. This allows for greater power efficiency, smaller size, lighter weight, lower overall cost of power systems. Currently, the evolutionary WBG solutions are taking hold in various application field: Power adapters for consumer electronics, Data centers, Electric Vehicles (EV), Industrial motors, wireless charging, and energy harvesting.
Foundry Services Process
Wide bandgap semiconductor (i.e., SiC and GaN) based power devices are the key for the next step toward the energy-efficient world. Sanan-IC offers a wide choice in foundry service of wide bandgap power devices, including MOSFET and SBD with different vol
SAIC provides wide bandgap material semiconductor power electronic device technology such as Gallium Nitride (GaN) and Silicon Carbide (SiC),these give our costumer more choices in circuit/system design of power conversion technology. This features enable